Infineon IPB049NE7N3G OptiMOS 3 Power MOSFET: Key Features and Application Benefits

The Infineon IPB049NE7N3G is a member of the OptiMOS™ 3 family, representing a benchmark in power MOSFET technology designed for high-efficiency and power-dense applications. This N-channel MOSFET is engineered using advanced silicon technology, offering an optimal balance between low on-state resistance and high switching performance. With a voltage rating of 40 V and a continuous drain current of 100 A, it is particularly suited for demanding automotive, industrial, and consumer applications.

Key Features

One of the most significant attributes of the IPB049NE7N3G is its exceptionally low on-state resistance (RDS(on)) of just 4.9 mΩ at 10 V. This ultra-low resistance minimizes conduction losses, which is critical for improving overall system efficiency and reducing heat generation. The device also features high current handling capability, allowing it to manage substantial power levels in a compact form factor.

The MOSFET is housed in an SuperSO8 package, which offers superior thermal and electrical performance compared to standard SO-8 packages. This package reduces parasitic inductance and resistance, further enhancing switching performance and reliability. Additionally, the device is AEC-Q101 qualified, making it suitable for automotive applications where robustness and longevity are paramount.

Application Benefits

In automotive systems, such as electric power steering (EPS), braking systems, and DC-DC converters, the IPB049NE7N3G provides high reliability and efficiency. Its low RDS(on) ensures minimal power loss, which is crucial for extending battery life in electric and hybrid vehicles. The strong thermal performance of the SuperSO8 package allows for better heat dissipation, enabling operation under high ambient temperatures.

For industrial applications, including motor control and power supplies, this MOSFET helps design compact and energy-efficient solutions. The high switching speed reduces switching losses, making it ideal for high-frequency circuits. In consumer electronics, such as gaming consoles and high-end servers, it supports high power density designs without compromising performance.

ICGOOODFIND

The Infineon IPB049NE7N3G OptiMOS™ 3 Power MOSFET stands out for its ultra-low on-resistance, high current capability, and superior thermal performance, making it an excellent choice for high-efficiency and high-power applications across automotive, industrial, and consumer sectors.

Keywords

Power Efficiency, Low RDS(on), Automotive Grade, Thermal Performance, High Current Capability