High-Efficiency Power Conversion with Infineon IPP60R280P7 600V CoolMOS™ P7 Superjunction MOSFET
The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power semiconductor technology. At the heart of this evolution are advanced MOSFETs, designed to minimize switching and conduction losses. The Infineon IPP60R280P7, a 600V CoolMOS™ P7 Superjunction MOSFET, stands out as a premier solution engineered to meet these challenges across a wide range of applications, including switched-mode power supplies (SMPS), server and telecom power, industrial drives, and photovoltaic inverters.
A key metric for any power MOSFET is its on-state resistance per unit area, defined as RDS(on) area. The CoolMOS™ P7 technology achieves a remarkable reduction in this figure of merit. The IPP60R280P7, with an RDS(on) of just 280 mΩ (max. at Tj=25°C), offers an exceptionally low gate charge (QG) and outstanding switching performance. This optimal ratio of low RDS(on) to low QG is critical for achieving high efficiency, particularly at high switching frequencies. By enabling faster switching, it allows designers to reduce the size of magnetics and capacitors, thereby significantly increasing the overall power density of the end system.
Beyond raw performance, the device incorporates features that enhance robustness and reliability. The integrated fast body diode provides superior reverse recovery characteristics, which is vital for hard-switching topologies like power factor correction (PFC) stages. This reduces switching losses and electromagnetic interference (EMI), simplifying filter design. Furthermore, the MOSFET exhibits a high avalanche ruggedness, ensuring resilience against voltage spikes and unpredictable transient events in harsh operating environments. The P7 series is also designed for ease of use, featuring a low thermal resistance and a wide SOA (Safe Operating Area), which provides designers with greater flexibility and margin.
The benefits extend to the system level. Utilizing the IPP60R280P7 can lead to a substantial increase in efficiency across the entire load range, crucial for meeting stringent international energy efficiency standards like 80 PLUS Titanium for server PSUs. The reduction in switching losses also translates directly into lower heat generation, which can simplify thermal management and potentially reduce the need for large heatsinks or active cooling, cutting both system size and cost.
ICGOOODFIND: The Infineon IPP60R280P7 CoolMOS™ P7 MOSFET is a benchmark in high-voltage switching technology. It masterfully balances ultra-low conduction losses with superior switching characteristics, making it an ideal choice for designers pushing the limits of efficiency and power density. Its integrated robustness features ensure high reliability, solidifying its position as a top-tier component for next-generation power conversion systems.
Keywords: High-Efficiency, Power Density, Superjunction MOSFET, Switching Performance, RDS(on)
