Infineon IPA95R1K2P7: A High-Performance 1200V CoolMOS™ P7 Power Transistor

The relentless pursuit of higher efficiency and power density in modern electronic systems demands continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon Technologies with its CoolMOS™ P7 series, a family of superjunction MOSFETs engineered to set new benchmarks. The IPA95R1K2P7 stands as a prime example, a 1200V power transistor that delivers an exceptional blend of ruggedness, efficiency, and ease of use for demanding applications.

A key challenge in high-voltage switching is the fundamental trade-off between on-state resistance (RDS(on)) and switching losses. The CoolMOS™ P7 technology shatters this compromise through advanced design and processing. The IPA95R1K2P7 boasts an impressively low typical RDS(on) of just 95 mΩ, which directly translates to reduced conduction losses. This allows for higher power throughput and cooler operation, enhancing overall system reliability. Concurrently, its superior switching characteristics minimize dynamic losses, enabling higher switching frequencies. This, in turn, permits the use of smaller passive components like magnetics and capacitors, directly contributing to increased power density and reduced system size and cost.

Beyond raw performance metrics, the IPA95R1K2P7 is designed with robustness and real-world application in mind. It features a highly dv/dt ruggedness and exceptional avalanche energy capability, making it resilient against voltage spikes and harsh operating conditions commonly encountered in industrial environments. Furthermore, the P7 technology incorporates an integrated fast body diode with excellent reverse recovery behavior. This characteristic is crucial for bridge topology applications, such as power factor correction (PFC) and motor drives, as it reduces losses and electromagnetic interference (EMI), simplifying the design of the snubber circuits.

The combination of low losses, high switching speed, and intrinsic ruggedness makes the IPA95R1K2P7 an ideal choice for a wide array of high-performance systems. It is particularly well-suited for:

Server & Telecom SMPS: Where high efficiency is critical for reducing operational costs and cooling requirements.

Industrial Power Supplies: Demanding reliability and compact form factors.

Photovoltaic Inverters: Requiring high voltage capability and efficiency for energy conversion.

Charging Infrastructure for E-Mobility: Needing robust and efficient power switching solutions.

ICGOOODFIND: The Infineon IPA95R1K2P7 exemplifies the pinnacle of high-voltage MOSFET technology. It is more than just a transistor; it is a comprehensive solution engineered for maximum efficiency, power density, and system robustness. By effectively breaking the traditional RDS(on) vs. switching loss trade-off and integrating application-specific features like a fast body diode, it empowers designers to create the next generation of compact, efficient, and reliable power electronics.

Keywords:

Superjunction MOSFET

High Efficiency

Low RDS(on)

Fast Switching

Avalanche Ruggedness