**HMC863ALC4: A High-Performance GaAs pHEMT MMIC Low Noise Amplifier for 24 GHz to 44 GHz Applications**

The **HMC863ALC4** represents a significant advancement in **monolithic microwave integrated circuit (MMIC)** technology, specifically engineered to address the demanding requirements of modern **millimeter-wave (mmWave)** systems. Operating across an exceptionally broad frequency range from **24 GHz to 44 GHz**, this low noise amplifier (LNA) is a critical component for applications in test and measurement equipment, 5G infrastructure, satellite communications, military electronic warfare (EW), and advanced radar systems.

Fabricated on a high-performance **Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT)** process, the HMC863ALC4 delivers a superior combination of low noise figure and high gain. It achieves a remarkably **low noise figure of 2.0 dB** while providing a high **small-signal gain of 22 dB** across the entire band. This high gain and low noise are paramount for enhancing receiver sensitivity, allowing for the detection of very weak signals that would otherwise be lost in the system's inherent noise.

The amplifier is designed for ease of integration and robust performance. It requires a single positive supply voltage between **+3V to +5V**, drawing a nominal current of 80 mA, making it suitable for portable and low-power applications. The device is also internally matched to 50 Ohms at both its input and output, minimizing the need for external components and simplifying the printed circuit board (PCB) design process. The HMC863ALC4 comes in a compact, RoHS-compliant 4x4 mm leadless chip carrier (LCC) package, facilitating surface-mount assembly in high-volume production.

Key performance specifications include an **output power at 1 dB compression (P1dB) of +15 dBm** and a high output third-order intercept point (OIP3) of +27 dBm, underscoring its ability to handle relatively high-power signals while maintaining linearity and minimizing distortion. This makes the amplifier not only sensitive but also resilient in dynamic signal environments. Furthermore, the device exhibits excellent return loss, with both input and output VSWR typically below 1.8:1, ensuring efficient power transfer and stability within the system.

**ICGOOODFIND:** The HMC863ALC4 stands out as a premier solution for high-frequency designs, **masterfully balancing exceptional low-noise performance with high gain and linearity**. Its wide bandwidth covers multiple key Ka-band and upper K-band applications, making it an incredibly versatile and powerful component for next-generation wireless systems.

**Keywords:** MMIC, Low Noise Amplifier, Millimeter-wave, GaAs pHEMT, High Gain