Infineon IPB025N10N3GATMA1: Key Specifications and Application Overview

The Infineon IPB025N10N3GATMA1 is a state-of-the-art N-channel power MOSFET that exemplifies the advancements in semiconductor technology for high-efficiency power management. As part of Infineon's extensive OptiMOS™ family, this component is engineered to deliver superior performance in a compact package, making it an ideal choice for a wide array of modern electronic applications.

A primary highlight of this device is its exceptionally low on-state resistance (RDS(on)) of just 2.5 mΩ (max. at VGS = 10 V). This key parameter is crucial for minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. The MOSFET is rated for a drain-source voltage (VDS) of 100 V, providing a robust solution for circuits operating at elevated voltages. Furthermore, it can handle a continuous drain current (ID) of up to 120 A at a case temperature of 25°C, showcasing its ability to manage high power levels effectively.

Housed in the space-saving PG-TDSON-8 (8x8mm) package, the IPB025N10N3GATMA1 is designed for automated assembly processes, enhancing manufacturing throughput. Its low-profile design is particularly beneficial in applications where board space is at a premium. The device also features low gate charge (QG) and fast switching capabilities, which are essential for high-frequency operation, further reducing switching losses and enabling the design of smaller, more efficient magnetic components in power supplies.

The combination of these attributes makes this MOSFET exceptionally well-suited for a diverse range of applications. It is a premier choice for:

DC-DC Converters in telecom and server power supplies, where efficiency and power density are paramount.

Motor Control Drives for industrial automation, robotics, and e-mobility, benefiting from its high current handling and robustness.

Synchronous Rectification in switch-mode power supplies (SMPS), leveraging its low RDS(on) to reclaim energy that would otherwise be lost as heat.

Battery Management Systems (BMS) and Load Switching, where its low power loss helps extend battery life in portable devices and power tools.

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In summary, the Infineon IPB025N10N3GATMA1 stands out as a high-performance power MOSFET that masterfully balances low resistance, high current capability, and efficient switching. Its compact form factor and exceptional electrical characteristics make it an indispensable component for designers aiming to push the boundaries of efficiency and power density in next-generation power electronics systems.

Keywords:

1. Power MOSFET

2. Low RDS(on)

3. High Efficiency

4. Synchronous Rectification

5. OptiMOS™