Infineon IRFR6215TRPBF P-Channel Power MOSFET Datasheet and Application Overview

The Infineon IRFR6215TRPBF is a high-performance P-Channel Power MOSFET designed to meet the rigorous demands of modern power management and switching applications. Leveraging Infineon's advanced proprietary MOSFET technology, this component offers an optimal blend of low on-state resistance, high current handling capability, and robust switching performance, making it a preferred choice for designers across various industries.

A primary highlight of the IRFR6215TRPBF is its exceptionally low drain-source on-resistance (RDS(on)) of just 0.065 Ohms (max) at a gate-source voltage of -10 V. This low RDS(on) is critical for minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. The device is rated for a continuous drain current (ID) of -12 A at a case temperature of 25°C and can handle a pulsed drain current (IDM) of up to -48 A, demonstrating its capability to manage high-power pulses and surge currents effectively.

Housed in a compact and industry-standard DPAK (TO-252) package, the IRFR6215TRPBF is designed for excellent power dissipation and is well-suited for automated PCB assembly processes. Its key maximum ratings include a drain-source voltage (VDS) of -150 V and a gate-source voltage (VGS) range of ±20 V, ensuring reliable operation in a wide array of circuit configurations.

From an application perspective, this P-Channel MOSFET is exceptionally versatile. Its primary function is as a high-side load switch in circuits such as DC-DC converters, power inverters, and motor controllers. The P-Channel configuration is particularly advantageous in high-side switching because it allows for a simpler drive circuit compared to an N-Channel MOSFET that would require a charge pump or bootstrap circuit to achieve a gate voltage higher than the supply rail. This makes the IRFR6215TRPBF ideal for:

Power Management Units (PMUs) in computing and telecom systems.

Reverse Polarity Protection circuits, where it can be used to block current flow in the event of incorrect power supply connection.

Battery Management Systems (BMS) for discharge control and load switching.

Industrial Automation controls for driving solenoids, actuators, and other inductive loads.

When designing with this MOSFET, careful attention must be paid to gate driving. To ensure fast switching transitions and avoid operating in the linear region for extended periods, a gate driver IC is often recommended to provide the necessary current to charge and discharge the MOSFET's input capacitance (Ciss) quickly. Furthermore, proper heatsinking is essential, especially when operating near maximum current ratings, to maintain the junction temperature within the specified limit of 175°C.

ICGOOODFIND: The Infineon IRFR6215TRPBF stands out as a highly efficient and robust P-Channel solution for power switching tasks. Its combination of very low RDS(on), high voltage rating, and industry-standard packaging makes it an excellent component for enhancing efficiency and reliability in power electronics design, from consumer gadgets to industrial machinery.

Keywords:

P-Channel MOSFET

Low RDS(on)

High-Side Switch

Power Management

TO-252 Package