Infineon IPP100N12S3-05: High-Performance 100V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPP100N12S3-05 stands out as a premier solution, engineered to meet the rigorous demands of modern high-efficiency applications. As part of Infineon's esteemed OptiMOS™ power MOSFET family, this 100V N-channel transistor is designed to deliver exceptional performance in a compact, robust package.

A key strength of the IPP100N12S3-05 lies in its extremely low typical on-state resistance (R DS(on)) of just 1.5 mΩ. This minimal resistance is crucial for minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. Whether deployed in synchronous rectification stages of switch-mode power supplies (SMPS), motor control circuits, or high-current DC-DC converters, this device ensures that more power is delivered to the load and less is wasted as heat.

Thermal management is another area where this MOSFET excels. The low R DS(on), combined with its high package efficiency, results in superior thermal performance and power density. The innovative PQFN 3.3x3.3 mm package offers an exceptionally low profile and minimizes parasitic inductance, which is critical for high-switching-frequency operation. This allows designers to push the limits of switching speed while maintaining system stability, making it ideal for space-constrained applications that require both high power and high frequency.

Furthermore, the device is characterized by its outstanding switching performance and high robustness. The optimized gate charge (Q G ) ensures fast and efficient switching, which further reduces switching losses—a significant advantage in high-frequency circuits. This robust design also provides a high tolerance to avalanche and commutation events, enhancing the overall reliability and longevity of the end product.

The Infineon IPP100N12S3-05 is particularly suited for a wide range of demanding applications, including:

Server & Telecom Power Supplies

Industrial Motor Drives and Controls

High-Current Synchronous Buck Converters

Solar Inverters and Energy Storage Systems

Battery Management Systems (BMS)

ICGOO FIND: The Infineon IPP100N12S3-05 is a top-tier power MOSFET that sets a high standard for performance and integration. Its industry-leading low R DS(on) in a minuscule package empowers engineers to design more efficient, power-dense, and reliable next-generation power systems, solidifying Infineon's position at the forefront of power semiconductor innovation.

Keywords: OptiMOS, Low RDS(on), Power Density, PQFN Package, High Efficiency.